新型功率SOI横向器件-研究.pdfVIP

摘要 该结构缓解了比导通电阻与耐压的矛盾关系，突破了硅极限，。 DT SOI MOSFET 的结构特征是：延伸到埋氧层的槽栅和漂移区中的介质槽。 介质槽沿纵向折叠漂移区，从而使器件等效漂移区长度大大增加。在漂移区长 3μm、顶层硅厚7.5μm 和埋氧层厚1μm 的SOI 材料上设计出的DT SOI MOSFET ， 相对于同尺寸常规 SOI，耐压提高约 162%，导通电阻下降约 46% 。设计了一套 合作单位可实施的工艺方案，解决了二氧化硅平坦化和槽栅工艺难度大的问题， 并完成了版图的绘制，正在进行流片。 关键词：SOI，击穿电压，比导通电阻，横向MOSET ，介质场 II 万方数据 ABSTRACT ABSTRACT SOI (Semiconductor On Insulator) lateral high voltage MOSFET (metal oxide semiconductor Field-Effect Transistor) is the key device of SOI power Integrated Circuits (ICs). However, its disadvantages, such as the low vertical breakdown voltage, self-heating effect and the ―silicon limit‖ between the specific on-resistance (Ron,sp) and breakdown voltage(BV), limit their application in high voltage and power ICs. By improving the vertical or lateral device structure, three new power SOI lateral MOSFET structures are proposed in order to realize high voltage, alleviate the self-heating effect and break through the ―silicon limit‖. 1. The Double-sided charge-Trench Partial SOI (DTPSOI) LDMOS and compound buried layer (CBL) with a step buried oxide (SBO CBL) SOI LDMOS are proposed, based on the charges enhancing electric field principle. The two new structures increase the vertical breakdown voltage and alleviate the self-heating effect by improving the vertical structure of SOI devices. (1) The 700V-class DTPSOI LDMOS is proposed and fabricated. It is characterized by oxide trenches on the top and bottom interfaces o