磁控溅射旋转圆柱阴极靶关键技术的研究与结构设计机械工程专业论文.docx

磁控溅射旋转圆柱阴极靶关键技术的研究与结构设计机械工程专业论文.docx

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磁控溅射旋转圆柱阴极靶关键技术的研究与结构设计机械工程专业论文

Key Technology and Structure Design of Cylindrical Rotating Cathode Target for Magnetron Sputtering ABSTRACT Cylindrical rotating cathode target for magnetron sputtering (cylindrical rotating target) since the invention to now, has been widely used in industrial area functional film production preparation. Although after decades of development and innovation, there are still some problems in industrial production. For example, the magnetic field distribution on the target surface which vertical electric field was uneven, causing the target materials was sputtered etching dont even, making the target material utilization ratio decreased .The design of the cooling water circulation system is not reasonable, makes the cooling heat transfer is not enough, causing its working poor stability, finally affects the coating quality. The key technologies of the system has been research based on the glow discharge, magnetron sputtering, plasma, electromagnetic field and heat transfer theory. Realized industrialized scale production of a new type of magnetic field structure with the design of cylindrical rotating target of the research objective. Firstly, the 2D magnetic field distribution law on the target surface of magnetic field component Bx, which perpendiculars to the direction of the electric field was simulated and calculated by ANSYS finite element method. The magnetic field strength was improved, and the target materials was covered with the sputtering surface area was expanded, by changing the wide and height of the magnet, the angle between the magnets, and setting up mobile magnetism baffle plates. It provides theory basis for the following magnetic field structure design . Secondly,the generation on cathode target has been calculated ,and the steady-state work of heat transfer process has been analyed ,including conduction, convection and radiation three ways, through the cal culation of steady work to get heat parameters. It provides the basis for the following

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