点杂多晶太阳能硅片电解磨削.docxVIP

- 点杂多晶太阳能硅片电解磨削 多线切割试验研究 章恺，汪炜，鲍官培，赵明才 （南京航空航天大学机电工程学院，南京，210016） 摘要：提出了一种电解磨削多线切割点杂多晶太阳能硅片的新方法。电源的正极接硅锭，负极接切割线网，电解过程中硅锭发生微区钝化反应，形成硬度较小的钝化膜，使得点杂多晶太阳能硅片更容易切割。试验结果表明，此技术有切割效率高、切片合格率高的优点。进一步检测发现硅片宏观的表面线痕浅、隐裂少，微观的表面平整性好。该技术的应用降低了硅片加工的成本，提高了硅材料的利用率，也为太阳能电池的运用拓宽了空间。 关键词：电解磨削；多线切割；点杂多晶；太阳能硅片 中图分类号：TH161，TQ151 文献标识码：A Experimental research on hybrid electrochemical grinding multi-wire saw impurities polycrystalline solar wafer Zhang kai，Wang wei，Bao guanpei，Zhao mingcai (Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China) Abstract: A new technology of cutting impurities polycrystalline solar wafer by hybrid electrochemical grinding multi-wire saw is put forward. In the process, silicon ingot and cutting line are connected with pulse power anode and cathode respectively. Due to electrolysis, micro passivation reaction will happen and passivation film whose hardness is smaller than silicon will form in surface of silicon ingot, which makes impurities polycrystalline ingot easier to be cut. The experimental results show that higher efficiency of cutting and higher slicing passes rate can be obtained by introducing this technique. Further, it is found that saw marks of silicon wafer is more shallow, micro-cracks is fewer and microscopic surface flatness is better. The technique can reduce silicon cutting cost and increase utilization of silicon. Thereby, the space for the use of solar cells is broadened. Key words：Hybrid electrochemical grinding; Multi-wire saw; Impurities polycrystalline; Solar wafer 多晶硅作为太阳能电池切片的主要材料，其来源相对于单晶硅要广泛，成本比单晶硅也要低。多晶硅的铸锭过程，存在石墨坩埚氮化硅涂层粘结不牢的现象，由于热对流作用会有杂质进入硅液产生硬质点，并且铸锭多晶硅回用料处理不干净也会出现硬质点，硬质点的成分多以SiC为主[1]。这些硬质点会随机的分布在一次铸造完成的全部硅锭内，其存在将导致硅锭开方后在切割成硅片时线切机切到点杂的位置时有跳线、切片上有明显的线痕 、点杂的位置切不动引起的断线等现象，这些都会引起整体硅片质量的下降，原因就是杂质区域硬度一般高于周围纯净区域。在工程实践中将这一类存在硬质点的多晶硅锭称为点杂多晶硅锭。就目前的市场切片量来看，点杂多晶硅锭的切片量约占全部切片量的不到5%，点杂多晶硅的存在主要取决于铸锭的工艺，然而这也是不可能避免的。虽然点杂多晶硅片对后续的制绒以及光电转换效率这一方面并无异于其他多晶硅片，但是无论从切片的合格率还是从切片的质量来看都比一般多晶硅要差，现阶段这一问题一直困扰着整个中国太阳能硅片行业，如能解决这一问题，经济上