低温下单根ZnO纳米线的光电性质-凝聚态物理专业论文.docx

摘 摘 要 万方数据 万方数据 摘 要 ZnO 在新兴的纳电子学和光电子学中有潜在的应用，使其在纳米光电子器件、纳米 传感器、光电子器件等方面拥有巨大的应用空间和潜力。由于表面效应，ZnO 纳米线的 导电性质受环境气氛、温度及光辐射的影响显著，因此，对低温下单根 ZnO 纳米材料 电阻随温度变化的研究以及紫外光响应的研究，有助于更好地理解一维纳米结构的电子 输运行为。 本文采用化学气相沉积（CVD）法合成 ZnO 纳米线。利用微栅模板法制备单根氧 化锌纳米线欧姆接触的微电极，为了研究单根 ZnO 纳米线器件在低温下的电子传输机 制，对器件在 60 K~300 K 温度范围内单根 ZnO 纳米线电阻随温度的变化特性进行了测 试，并对电阻随温度变化的数据进行拟合，得到 160 K~300 K 温度内，热激活传导为主 要的输运机制。而在 60 K~140 K 温度内，载流子只能在最近邻能态上进行跳跃传导， 即此时近程跳跃传导为主要的输运机制。在 300 K、200 K、100 K 等不同温度下测试了 单根 ZnO 纳米线器件的紫外光响应和恢复情况。结果表明，低温下器件对紫外光的敏 感性提高，电流的恢复时间随着温度的降低而延长。 关键词： ZnO 纳米线；低温；传输机制；紫外光敏 I Ab Abstract Abstract Due to the potential applications in the fields of emerging nanoelectronics and optical electronics, ZnO has the considerable prospect of being applied to optoelectronic devices, nano sensors, optoelectronic devices, and etc. Because of the surface effect, the electrical properties of ZnO nanowires are observably influenced by atmosphere, temperature, and radiation. So in order to research the electronic transport mechanism of single ZnO nanomaterial well, it is necessary to explore the influence factors such as temperature and/or ultraviolet response under the low temperature condition. In this paper, the ZnO nanowires were synthesized by chemical vapor deposition (CVD) method . The microelectrodes were prepared by micro grid template method made single and the Ohmic contacts between metals and single nanowires were successfully formed, In order to research electronic transmission mechanism of the devices under the low temperature, the temperature was controlled in the range of 60 K to 300 K. Then the data obtained was fitted; the results suggest that thermal activation conduction is the main transport mechanism within 160 K to 300 K, but in the range of 60 K to 140 K, carriers could only obey salutatory conduction on the nearest neighbor energy state, i.e. the nearest-neighbor hopping conduction is the main transport mechanism. The ultraviolet response and recovery process of the single ZnO nanowires devi