irf9620中文资料新.pdfVIP

元器件交易网 IRF9620 Data Sheet July 1999 File Number 2283.2 3.5A, 200V, 1.500 Ohm, P-Channel Power Features MOSFET • 3.5A, 200V This P-Channel enhancement mode silicon gate power field • r = 1.500Ω DS(ON) effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of • Single Pulse Avalanche Energy Rated energy in the breakdown avalanche mode of operation. All of • SOA is Power Dissipation Limited these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, • Nanosecond Switching Speeds relay drivers, and drivers for high power bipolar switching • Linear Transfer Characteristics transistors requiring high speed and low gate drive power. • High Input Impedance These types can be operated directly from integrated circuits. Symbol Formerly developmental type TA17502. D Ordering Information G PART NUMBER PACKAGE BRAND IRF9620 TO-220AB IRF9620