xp1024-bd-ev1中文资料新.pdfVIP

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xp1024-bd-ev1中文资料新

元器件交易网 26.0-31.0 GHz GaAs MMIC Power Amplifier April 2007 - Rev 17-Apr-07 P1024-BD Features Chip Device Layout Balanced Design Provides Good Output Match XP1024-BD On-Chip Temperature Compensated Output Power Detector 32.0 dB Small Signal Gain +36.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s four stage 26.0-31.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. The Absolute Maximum Ratings device also includes Lange couplers to achieve good Supply Voltage (Vd) +6.0 VDC output return loss and an on-chip temperature Supply Current (Id) 1700 mA compensated output power detector. This MMIC uses Gate Bias Voltage +0.3 VDC Mimix Broadband’s 0.15 µm GaAs PHEMT device model Input Power (Pin) +5 dBm technology, and is based upon electron beam O Storage Temperature (Tstg)

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