Al234HSiC MOS结构制备及相关性能研究.docx

优秀毕业论文 精品参考文献资料 Abstract Shanghai Normal University of Master Phi losophy of 02 and NO atmospheres on the electrical and interracial properties of MOS structure is investigated．NO atmosphere lowers the passivation temperature to～700 。C，the interface state density at the flant band is reduced from 1 01 3(before annealing)to 1 012cm’2eV。1(after annealing at 700。C)，and the border interface trap density is reduced from 2．32x1012 to 2．1×10¨／cm2eV～．Compared to 02 anealing，a lower leakage is achieved for MOS structure after NO annealing，which demonstrates that the NO annealing has an advantage in A1203／4H—SiC interface passivation． MOS structures are prepared by using A1203 and Si02 as gate materials．The distribution of the interface states are calculated by Terman method．The results show that the distribution is similar each other，in which the interface state density is gradually decreased from the conduction band to the mid—gap．This phenomenon is related to the defect，such as the near interface trap．The oxygen vacancy level， located in the 1．6 eV below the A1203 conduction band，just falls into the E。．Et～0．1 6 eV of the 4H-SiC band gap．The exchange rate between the substrate and the near interface state is slow enough，which could be passived by NO and 02 annealing． Hill-Coleman method is also applied to calculate the interface density．It is found that A1203 has a low interface density compared tO Si02．We believe that A1203 will become an ideal gate material to fabricate 4H—SiC MOS device in the respect of lower interface state and the future integration． Keywords：SiC；thermal oxidation；atom layer deposition；electron transport； annealing method Thesis type：Applied basis 万方数据  上海师范大学硕士学位论文 目录 目 录 摘 要 一I Abstrat．．．． ．． ．． ．．．． ．．．．．．． ． ． ．． ． ． ．．． ．．．．．III 目 录 ．V 第1章文献综述 1 1．1研究背景 l 1．1．1碳化硅材料 1 1．2碳化硅金属氧化物半导体场效应管 ．3 1．2．1 SiC击穿场强和击穿电压 3 】【．2．2 SiC MOSFET ． ． ． ． ． ．． ．．．．．． ．．． ． ． ．． ． ． ．．． ．．． ．．．．． ．． ．．．． ．．4 1-3制造碳化硅