AlGaInP与GaN LED电极形的优化设计.docx

优秀毕业论文 精品参考文献资料 2 2 扬州人!学硕十学位论文 iF．向工作电压，减小串联电阻；②热效应小，光功率最高点对应的电流数值高，光 效随电流增加的降低幅度小，波长随电流变化的红移量小；⑧有助于减弱量子限制 斯塔克效应，无ITO芯片的波长大，蓝移量小，ITO芯片则相反；④有助于改善芯 片的光特性，提高芯片的亮度、光效率、光功率，但一定尺寸芯片电极形状达到一 定复杂程度后，会导致芯片的光效率和光功率降低，需在光和电性能之间进行折中。 综合考虑波长、电压和亮度等性能．对边电极、优化的对边电极、环行电极I--+,p 电极的光电特性对14mil GaN LED来说是比较优越的。而本文中设计出的新型电极 ——旋转形电极、树形电极、中心环绕形电极等三种电极，已形成自己的专利技术， 可以应用在更大尺寸的功率型芯片，获得优越的光电性能，应用于景观和室内外照 明，形成商业化产品，具有巨大的潜在应用价值。 关键词：LED，电极形状，电流扩展，出光效率，有限元法，CrosslightAPSYS 张俊兵：AlGaInP 张俊兵：AlGaInP与GaN LED【乜极形状的优化没计 Abstract Electrode shape determines current spreading capacity of the chip，and directly affects the photoelectric properties．Optimized electrode shape can have better。current spreading capacity,more uniform current distribution，smaller current crowding effect， operating voltage，series resistance，Joule heat and red shi ft，and longer life．At the same time，compared with other methods for improving effi ciency of the chip，such as surface roughening，substrate lift—off,wafer bonding，high reflection metal film，optimization electrode shape could be the most the most worthwhi le to study．Because this method has the following several benefits：Firstly,operation is simple，without added special process steps．Secondly,it doesn’t need to purchase specialized equipment，SO implementation is easy．Thirdly,after replacing lithography mask，the efficiency can be improved under the same cost of production．Therefore，in this paper we use MATLAB to simulate affecting factors and distribution of quaternary AIGalnP LED’S output efficiency,and optimize the traditiofial-cii-cular electrode．Also，with Crossli曲t APSYS software thirteen electrode shapes for GaN LED were simulated，and the effect of electrode shapes on the photoelectric performance was studied by chip manufacture experiments．The detail main contents ale following two parts： 1、We use finite element method to simulate affecting factors and distribution of quaternary AIGalnP LED’S output efficiency of light with transparent electrode，and found that the thic