超薄埋氧层FDSOI器件制备及其性能测试谭思昊-中国半导体分立.PDF

超薄埋氧层FDSOI 器件制备及其性能测试 谭思昊，李昱东，徐烨峰，闫江 ( 中国科学院 微电子研究所 微电子器件与集成技术重点实验室，北京100029) 摘要：全耗尽绝缘体上硅（FDSOI ）器件具有出色的短沟道效应(SCE)控制能力等优势，是 22 nm 及以下的CMOS 技术节点中的有力竞争者。为了研究减薄埋氧层（BOX ）厚度对FDSOI 器件性能和短沟道效应的影响，并进一步提高FDSOI 器件的短沟道效应控制能力，制备了 超薄BOX （UTB ）FDSOI 器件，并同时制备除BOX 厚度外其余条件完全相同的145 nm 厚 BOX FDSOI 对比器件。对制备的器件进行了电学性能测试，展示了两种器件的传输特性和 转移特性曲线，并且对器件施加背栅偏压以研究其对器件性能的调制作用。测试结果显示， UTB FDSOI 器件的关断电流Ioff 与145 nm 厚BOX FDSOI 器件相比降低了近50%，DIBL 性能也得到了显著提升。此外，施加背栅偏压不仅可以更灵敏地调制FDSOI 器件性能，而 且可以有效地优化器件的短沟道效应。 关键词：全耗尽绝缘体上硅（FDSOI ）；超薄埋氧层（UTB ）；器件制备；短沟道效应(SCE ）； 背栅偏压 中图分类号：TN386.1 文献标识码：A 文章编号：1671-4776(2016)09-0565-06 Fabrication and Performance Test of Ultra Thin Buried Oxide FDSOI Devices Tan Sihao，Li Yudong ，Xu Yefeng ，Yan Jiang (Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China) Abstract:The fully depleted silicon on insulator (FDSOI) device with the advantages of the excellent short channel effect (SCE)control ability is a most promising technology in CMOS technology nodes of 22 nm and beyond. In order to study the effects of the thinned buried oxide(BOX) layer on the performance and SCE of the FDSOI devices and improve the SCE control ability of the FDSOI devices, the ultra thin BOX (UTB) FDSOI device was fabricated, and the 145 nm thickness BOX FDSOI device with the same conditions except the BOX thickness was also fabricated to compare the testing results. The electrical performance tests of the prepared devices were carried out, and the transmission characteristic and transfer characteristic curves of the two devices were demonstrated. The back gate bias was applied on the devices to study the modulation effect of the back gate bias for the device performances. The test results show that the turn off current Ioff of the UTB FDSOI device reduces nearly 50% than that of t