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A Dual-Band Parallel Doherty Power Amplifier外文电子书籍.pdf

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3214 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 10, OCTOBER 2012 A Dual-Band Parallel Doherty Power Ampliﬁer for Wireless Applications Andrei Grebennikov, Senior Member, IEEE, and James Wong, Member, IEEE Abstract—In this paper, a novel dual-band transmission-line parallel Doherty ampliﬁer architecture for active antenna arrays and base-station applications in next-generation communica- tion systems is presented. The carrier and peaking ampliﬁers using GaN HEMT Cree CGH40010P devices are designed based on the reactance compensation technique to provide optimum Class-E impedance seen by the device output at the fundamental frequency across the wide frequency range achieving drain efﬁ- ciencies over 73% across the frequency range from 1.7 to 2.7 GHz. In a single-carrier WCDMA operation mode with a peak-to-av- erage ratio of 6.5 dB, high drain efﬁciencies of 40%–45% can be achieved at an average output power of 39 dBm with an of about 30 dBc at center bandwidth frequencies of 2.14 and 2.655 GHz. Index Terms—Broadband Class E, Doherty ampliﬁer, efﬁciency, GaN HEMT, reactance compensation, RF power ampliﬁer, trans- mission line. I. INTRODUCTION N NEXT-GENERATION fourth-generation (4G)/ﬁfth-gen- I eration (5G) telecommunication systems, it is required that Fig. 1. Block diagram of conventional and modiﬁed Doherty ampliﬁers. the radio transmitter in general and power ampliﬁers as its key part in particular operate with high efﬁciency over a wide and integration for small-cell applications are vitally needed frequency range to provide multiband and multistandard oper-