基于芬顿反应的单晶sic集群磁流变化学复合抛光研究-机械制造及其自动化专业论文.docxVIP

优秀毕业论文 精品参考文献资料 广东工业大学硕士学位论文(Magnetorheological 广东工业大学硕士学位论文 (Magnetorheological Finishing MRF)、CMRF三种抛光在粗抛和精抛时的特点。粗抛 时CMP的材料去除率远高于MRF和CMRF，抛光后晶片表面各区域表面粗糙度也比 MRF和CMRF组均匀。精抛时以W0 5金刚石磨料抛光120mm，CMRF组和MRF组 由于集群磁流变柔性抛光垫作用表面质量明显好于CMP，其中CMRF组得到划痕很浅 甚至局部无划痕的SiC超光滑表面，获得了原子级表面粗糙度(m0．16nm)，实现了单晶 SiC材料表面的超光滑平坦化。 关键词：单晶碳化硅，芬顿反应，集群磁流变，复合抛光，表面粗糙度 万方数据 ABSTRACTABSTRACT ABSTRACT ABSTRACT As the third generation semiconductor materials．S iC has excellent characteristics such as strong thermal conductivity，bw dielectric constant,strong radiation resistance and good chemical stability,as a consequence，its promising in LED lighting，electronics，aerospace, automobile and computer chips．For application of SiC wafers，ultra smooth and defects flee surface is requisite，but as a result of high hardness，strong chemical stability，the ultra-precision processing of SIC wafers is difficult,inefficient and costly Therefore， research On ultra-precision polishing process ofSiC wafer,reducing the processing cosN and achieving atomic ultra smooth surface is an urgency and key technical problems need to be solved for application ofSiC semiconductor device Cluster magnetorheological chemical compound polishing(CMRF)was used南r polishing single—crystal SIC．Due to the exist of accommodate-sinking effect produced by cluster rmgnetorheological flexible polishing pad，the mechanical damage on surface of wafer caused by abrasive can be reduced greatly,and lower roughness can be obtained．In addition,the oxidation of hydroxyl radical(‘OH)in polishing solution can effectively improve the efficiency ofpolishing，which makes the surface roughness fall faster The catalytic effect fenton reaction of several kinds of solid catalyst and liquid catalyst WaS compared by chemical corrosion experiments，CMP experiments of single．crystal SiC and concentration detection experiments of catalytic ferrous ions(Fe2+) The fenton corrosion fluid composed by Fe304 and 1-1202 was confirmed evey efficient in corrosion of single