基于表面等离子体共振效应的新型mems红外辐射源研究-微电子学与固体电子学专业论文.docxVIP

优秀毕业论文 精品参考文献资料 构中的电介质包括Si02 构中的电介质包括Si02、Si3N4、SioxNy、SU一8等。实验结果表明，Su一8厚度 在小于1微米时，透射强度远大于厚度1微米以上的结构，且有透射强度最大值 出现(su一8厚度为360纳米)，同时，随着SU一8厚度的增加，透射谱峰值呈现 规律性红移，与已经有的单层金属以及三层结构的研究结果相比，本结构的透射 峰更窄，透射峰强度更大。研究结果同时表明采用FDTD数值模拟软件R—soft 的结果与实验相符。 关键词：MEMS，表面等离子体共振效应，KOI-UIPA，凸角腐蚀，二维金属亚波长圆孔 阵列，MDM AbstractMEMS Abstract MEMS infrared gas has excellent selectivity,sensitivity and stability owing to using spectral characteristics of gas as measurement．Thereinto，the research on MEMS infrared light source，which is the key components of it has been concerned in recent years．With the development of nanometer plasmonic crystals technology,it was noted that using the characteristics of two-dimensional metallic subwavelength(hole diameter less than half of the wavelength of incident light)round hole arrays to select specific wavelength of light and enhance extraordinary optical transmission(EOT)，it is possible to provide an effective means of fabricating MEMS infrared radiation light source having very good selection and enhancement in specific range of infrared light． The work of the thesis included five facts shown below： 1．The relationship of the100Si bulk etching characteristic with the temperature and concentration of KOH／IPA mixed solution．It is found that，with higher concentration of IPA and lower temperature，the cutting ratio will be smaller．With IPA 1 00％concentration，at 30。C，the best cutting ration 1．05 is found． 2．A novel SPR-MEMS infrared light have been designed and fabricated based on the research on infrared radiation characteristics of the SPR device．Four different light source structure have been designed，the infrared light sources are structured by Si--Si02(650nm)-- Si3N4(200nm)--Pt(200nrn)then patterned with periodic array of perforations(hole depth=8part， the hole shape is circular)．The Si02 and Si3N4 are insulation layers，the Pt is filament material．It is found that the peak wavelength was proportional to the lattice constant．For emitters with same lattice consta