射频磁控溅射法制备tio2和al2o3薄膜的研究凝聚态物理专业论文.docxVIP

A B A B S T R A C T T w o series o f ox id e -T i〇2 an d A I2O 3 film s, fab ricated o n K 9 g lass u sin g th e G JL 5 6 0 C I2 spu tterin g sy stem , h av e b een in v estig ated in th is p ap er. T iC2 film s w ere d ep o sited b y directly sp u tterin g th e T iC2 targ et w ith a v ery h igh p u rity u n d er argon p lasm a en v iro nm en t, w h ile A I2O 3 film s w ere o b tain ed b y reactively sp u ttering w h ere th e o x y gen w as in p u t in to the ch am b er du rin g th e sp utterin g o f th e p u re A 1 target. T h e effects o f d ep ositio n p aram eters, su ch as sp u tterin g po w er, d epo sito n pressu re an d argo n flo w , on th e m icrostructu re an d prop erties o f th e film s h av e b een stu died and an alyz ed . S om e co n clu sion s o n th ese tw o k in d s o f film s are d raw n o u t as fo llow in g , resp ectiv ely . 1 T i0 2 T h e as-d ep o sited T i0 2 film s are am orp h ou s, an d th ey b eco m e cry stallized b y an ann ealin g h eat treatm en t at 4 5 0 °C .T h e an n ealed sam p les, ch aracterized b y an an alase crystallin e stru ctu re, h av e d ifferent crystallin e o rien tation , d ep en din g o n th e sputterin g p ow er that w as u sed to d epo sit th e film s. T h e n egativ e b ias, d epo sitio n pressure as w ell as argo n flo w affect th e crystallin e stru ctu re o f th e T i0 2 film s, as in dicated b y th e fact th at th e X R D sp ectra o f th e film s d iffer from each o th er. T h e su rface m o rph o lo g y o f th e film s is in flu en ced b y th e p ro cessin g p aram eters app lied du rin g th e d ep o sitio n . T h e sp u tterin g p o w er, ran g in g w ith in 4 0 W -10 0 W , g iv es th e low est su rface ro u gh n ess at 8 0 W , resu ltin g a sm o oth su rface . A s th e n eg ativ e b ias in creases, th e su rface ro u gh n ess o f th e film s in creases at first, b u t it d ecreases w h ile ev en larg er b ias is ap p lied . W ith in th e ran g e o f 0 .8 -1.6 P a, th