wled用mn4掺杂氟化物红色荧光粉的合成及发光性能研究材料工程专业论文.docxVIP

摘要二、采用共沉淀法成功制备了名义组成为K2Sil。GexF6：Mn4+@=0，0．25，0．50) 摘要 二、采用共沉淀法成功制备了名义组成为K2Sil。GexF6：Mn4+@=0，0．25，0．50) 的红色荧光粉。结果表明：Ge4+可部分固溶于K2SiF6；该荧光粉的激发、发射光 谱与K2SiF6：Mn4+红色荧光粉类似，主发射峰位于634 nin处，色坐标为(0．693， 0．303)。随Ge4+含量的增加该荧光粉的颗粒尺寸逐渐增大，发光强度逐渐增强， 且在名义组成为K2Sio．50Geo．50F6：Mn4+的荧光粉中观察到了通常只出现于低对称晶 体场的零声子线，可能的原因是Ge4+的存在既促进了№4+的掺入，也降低了 Mn4+所处晶体场的对称性。 三、成功将K2SiF6：Mn4+荧光粉分别与商用黄、绿粉混用制得WLED．YR、 WLED．GR系列WLED，实现了该红粉在WLED中的应用。研究表明，随红粉 配比的增加，所制WLED的红光成分逐渐增强，显色性能也得到了显著改善。 其中，黄、红粉配比为2：8的WLED—YR5样品表现出了极好的综合性能，其色 坐标(0．3380，O．31 14)与理想白光接近，相关色温为5，182 K，显色指数Ra高达 90．7；绿、红粉配比为4：6的WLED—GR4的色坐标(0．3340，O．3560)也十分接近 理想白光。 最后，针对当前该Mn4+掺杂氟化物红色荧光粉所面临的两大难题一一减少或 避免HF的使用和提高荧光粉稳定性，展望了该红粉的发展前景。 关键词：共沉淀；K2SiF6；K2Sil畸GexF6；红色荧光粉 万方数据 AbstractAbstract Abstract Abstract Since 1 990s，white light emitting diode(WLED)has experienced rapid growth because of the invention of high-brightness GaN—based blue chip．Currently,WLED has become the most promising next generation lighting technology due tO its advantages such hi【gh efficiency,energy—saving，environmental friendliness，durability，etc．It has been recognized the fourth generation lighting SOurCe following the incandescent lamp，fluorescent lamp and high intensity discharge lamp．However，the current WLED exhibits not only low color rendering index but also low luminous efficiency due to the lacking of red component and the wavelength of red light is too long for human eyes． Therefore，it is urgent to fmd red phosphor with narrowband emitting to make up the deficiencies of WLED． In this paper，we chose composed fluoride K2MF6(M=Si，Ge)as host material because of the low phonon energy and high luminous efficiency of fluoride，besides， Mn4+shows special spectral characteristics with broadband excitation and narrowband emission,which cause a high purity red emitting with narrowband，in the six- coordinated environment provided by this matrix．In this study，we have prepared Mn4+一 doped fluoride red phosphors for WLED via coprecipitation method，including K2SiF6： Mn4+and KESil吖GexF6：M