SRAM的存储单元-浙江大学.PPTVIP

EE141 * EE141 * EE141 * EE141 * EE141 * EE141 * * Spring 2016 ZDMC – Lec. #1 – 8 课后作业 1. 查阅： 国际上的数字相关集成电路公司的EPROM,EEPROM,FlashROM,RAM,DRAM,SDRAM芯片的型号、接口类型、速度…… 图书馆资源：电子器件天地, 软件; 8/ 2. 习题：/课本P383 HW10: 7.2, 7.5, 7.9, 7.12, 7.14 ；（5月5日前交） 3. 阅读： ch7.4-7.5; Ch8.1-8.5 Ch 10.4-10.6 EE141 * EE141 * EE141 * 上课说明此门课程的成绩合成：平时成绩包括平时小测验、期中考试、作业、出勤、课堂讨论、论文 EE141 * EE141 * EE141 * EE141 * EE141 * EE141 * EE141 * EE141 * EE141 * EE141 * EE141 * EE141 * EE141 * EE141 * EE141 * EE141 * EE141 * EE141 * EE141 * EE141 * EE141 * EE141 * EE141 * EE141 * EE141 * EE141 * EE141 * * Spring 2016 ZDMC – Lec. #1 – 8 7.2.2 可编程ROM（PROM） 总体结构与掩模ROM一样，但存储单元不同 写入时，要使用编程器 * Spring 2016 ZDMC – Lec. #1 – 8 7.2.3 可擦除的可编程ROM（EPROM）Erasable Programmable ROM 总体结构与掩模ROM一样，但存储单元不同 一、用紫外线擦除的PROM（UVEPROM） nonvolatile * Spring 2016 ZDMC – Lec. #1 – 8 * Spring 2016 ZDMC – Lec. #1 – 8 * Spring 2016 ZDMC – Lec. #1 – 8 二、电可擦除的可编程ROM（E2PROM） Electrically Erasable PROM 总体结构与掩模ROM一样，但存储单元不同 Without a UV light source and a special PROM programmer unit * Spring 2016 ZDMC – Lec. #1 – 8 Electrically Erasable PROM Another advantage of the EEPROM over the EPROM is the ability to erase and rewrite individual bytes (eight-bit words) in the memory array electrically. This byte erasability makes it much easier to make changes in the data stored in an EEPROM. The early EEPROMs, such as Intel’s 2816, required appropriate support circuitry external to the memory chips, included the 21-V programming voltage (VPP). The newer devices, such as the Intel 2864, have integrated this support circuitry onto the same chip with the memory array, it requires only a single 5-V power pin. * Spring 2016 ZDMC – Lec. #1 – 8 Timing for the write operation. * Spring 2016 ZDMC – Lec. #1 – 8 * Spring 2016 ZDMC – Lec. #1 – 8 三、快闪存储器（Flash Memory） 为提高集成度，省去T2（选通管） 改用叠栅MOS管（类似SIMOS管） The challenge for semiconductor engineers was to fabricate a nonvolatile memory with the EEPROM’s in-circuit electrical erasability, but with densities and c