单晶硅片负极界面形貌的原位AFM探测-IngentaConnect.PDF

物理化学学报(Wuli Huaxue Xuebao) January Acta Phys. -Chim. Sin . 2016, 32 (1), 283–289 283 [Article] doi: 10.3866/PKU.WHXB201511132 单晶硅片负极界面形貌的原位AFM探测 * 刘兴蕊 严会娟 王 栋 万立骏 ( 中国科学院化学研究所，分子纳米结构与纳米技术实验室，北京分子科学国家实验室，北京 100190) 摘要：利用原子力显微镜原位研究单晶硅片负极在首次充放电循环中的界面形貌变化。硅负极表面固体电解 质界面(SEI)膜的形成过程为：初始SEI膜从1.5 V开始形成，在1.25–1.0 V之间生长快速，0.6 V左右生长缓 慢。初始SEI膜具有层状结构的特征，表层薄膜较软，下层呈颗粒状，机械稳定性较好。在锂化电位下，硅 负极表面的单晶结构逐渐变得颗粒化，发生不可逆的结构变化。经过首个充放电循环后，硅负极表面被厚度 不均一的SEI膜所覆盖，SEI膜的厚度大约为10–40 nm。 关键词：硅负极；固体电解质界面膜；原位原子力显微镜 中图分类号：O646 In situ AFM Investigation of Interfacial Morphology of Single Crystal Silicon Wafer Anode * LIU Xing-Rui YAN Hui-Juan WANG Dong WAN Li-Jun (CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China) Abstract: The interfacial morphology of a single crystal Si wafer anode during the first discharging-charging cycle was investigated using in situ atomic force microscopy (AFM). The solid-electrolyte interphase (SEI) began to grow from 1.5 V, developing rapidly between 1.25 and 1.0 V, and slowed down after 0.6 V. The morphology suggested that the SEI had a