γ射线辐照对SiGeHBT直流电学性能的影响-中国科技论文在线.PDFVIP

JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS 14-4(2003) 199-203 Effects of neutron irradiation on SiGe HBT and Si BJT devices XIANG-TI MENG, HONG-WEI YANG, AI-GUO KANG Institute of Nuclear Energy Technology, Tsinghua University, Beijing 100084, P. R. China JI-LIN WANG, HONG-YONG JIA, PEI-YI CHEN, PEI-HSIN TSIEN Institute of Microelectronics, Tsinghua University, Beijing 100084, P. R. China E-mail: Mengxt@ The change of electrical performance of SiGe HBT and Si BJT is studied after irradiation with 1.3x1013 and 1.0x1014 reactor fast neutrons cm-2. Ic and βdecrease, while Ib increases generally with an increasing neutron irradiation fluence for SiGe HBT. For Si BJT, Ic increases at low Vbe bias, decreases at high Vbe bias; Ib increases; and βdecreases much more than a SiGe HBT at the same fluence. It is shown that a SiGe HBT has much better anti-radiation performance than a Si BJT. The mechanism of performance changes induced by irradiation is discussed. © 2003 Kluwer Academic Publishers 1. Introduction Silicon-germanium (SiGe) heterojunction bipolar transistors (HBT) have higher performance with ultrahigh frequency, lower noise, a shorter transport time, a larger current gain, and better low temperature capability than conventional Si bipolar junction transistor (BJT). With the increasing demand for radiation-hardening of semiconductor devices used in space communication system, satellites, space-born platforms, and other radiation environments, the particle radiation effect for SiGe HBT has been studied [1, 2]. In this work, the change of electrical performance of SiGe HBT is studied as a function of reactor fast neutron radiation fluence in compa