BC857BV,115;中文规格书,Datasheet资料.pdfVIP

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BC857BV PNP general purpose double transistor Product data sheet 2001 Nov 07 Supersedes data of 2001 Aug 10 / NXP Semiconductors Product data sheet PNP general purpose double transistor BC857BV FEATURES PINNING • 300 mW total power dissipation PIN DESCRIPTION • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin 1, 4 emitter TR1; TR2 package 2, 5 base TR1; TR2 • Excellent coplanarity due to straight leads 6, 3 collector TR1; TR2 • Improved thermal behaviour due to flat leads • Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors • Reduces required board space • Reduces pick and place costs. 6 5 4 6 5 4 APPLICATIONS TR2 • General purpose switching and amplification. TR1 DESCRIPTION 1 2 3 1 2 3 PNP double transistor in a SOT666 plastic package.