BUK9Y30-75B,115;中文规格书,Datasheet资料.pdfVIP

BUK9Y30-75B N-channel TrenchMOS logic level FET Rev. 04 — 10 April 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Q101 compliant on-state resistance Suitable for logic level gate drive Suitable for thermally demanding sources environments due to 175 °C rating 1.3 Applications 12 V, 24 V and 42 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T ≥25 °C; T ≤ 175 °C - - 75 V DS j j ID drain current VGS = 5 V; Tmb = 25 °C;