BDW47G;BDW42G;BDW46G;BDW47;BDW42;中文规格书,Datasheet资料.pdfVIP

BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features 15 AMP DARLINGTON • High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc. COMPLEMENTARY SILICON • Collector Emitter Sustaining Voltage @ 30 mAdc: POWER TRANSISTORS VCEO(sus) = 80 Vdc (min) − BDW46 80−100 VOLT, 85 WATT 100 Vdc (min) − BDW42/BDW47 • Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc MARKING 3.0 Vdc (max) @ IC = 10.0 Adc DIAGRAM • Monolithic Construction with Built−In Base Emitter Shunt resistors 4 • TO−220AB Compact Package • These are Pb−Free Packages* TO−220AB BDWxx CASE 221A−09 AYWWG