单晶硅体寿命与表面复合速率的分离-中国科技论文在线.PDF

第8 卷第15期 Vol.8 No.15 2015 年 8 月 August 2015 单晶硅体寿命与表面复合速率的分离 宋成源，李 平，王宇轩，王禹均，刘爱民* （大连理工大学物理与光电工程学院，辽宁大连 116024 ） 摘要：表面复合速率和体寿命是硅半导体材料的2 个重要参数。根据单晶硅中非平衡少数载流子浓度的一维连 续性方程，在准稳态光电导（quasi-steady state photoconductance ，QSSPC ）测试模式下通过数值分析计算，最 终将表面复合速率与体寿命分离开。通过计算不同电阻率的 P 型单晶硅，在高注入情况下，相较恒定常数的 体寿命，依赖于非平衡载流子浓度变化的体寿命严重影响载流子的分布。 关键词：半导体物理学；硅太阳能电池；准稳态光电导；体寿命；表面复合速率 中图分类号：O47 文献标识码：A 文章编号：1674-2850(2015)15-1614-07 Separation of bulk lifetime and surface recombination velocity in silicon wafer SONG Chengyuan, LI Ping, WANG Yuxuan, WANG Yujun, LIU Aimin (School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian , Liaoning 116024, China) Abstract: The surface recombination velocity and the bulk lifetime of minority carriers are important electronic properties for silicon solar cell materials. In this work, according to the one-dimensional continuity equation of non equilibrium minority carrier concentration in silicon wafer, and through the numerical analysis under quasi-steady state photoconductance (QSSPC) test model, we separate bulk time and surface recombination velocity. Based on the calculation on the P silicon wafer with different resistivities, we find that bulk lifetime depending upon carrier density influences the density distribution vitally rather than taking bulk lifetime as a constant at high injection level. Key words: semiconductor physics; silicon solar cells; quasi-steady state photoconductance; bulk lifetime; surfa