氧离子能量对离子束辅助沉积Al2O3薄膜的结构及光学性能的影响.PDF

32 8 2012 8 CHINESE JOURNAL OF VACUUM SCIENCE AND ECHNOLOGY 705 Al O 2 3 * 王金晓 王志民 冯煜东 王 艺 赵 慨 速小梅 王 虎 ( 730000) Synthesis and Characterization of Al O Films by Oxygen 2 3 Ion Beam Assisted Reactive Pulsed Magnetron S uttering * Wang Jinxiao ,Wang Zhimin, Feng Yudong, Wang Yi, Zhao Kai, Su Xiaomei, Wang Hu ( Science and Technology on S urf ace Engineering Laboratory , L anzhou I nst itute of Physics , L anz hou 730000, China) Abstract he Al O filmswere deposited by oxygen ion beam assisted reactive pulsed magnetron sputtering on poly- 2 3 imide substrate. In the newly-developed technique, the pulsed sputtering of Al was synchronizedwith irradiation of low en- ergy oxygen ions to control the stoichiometry. he impacts of the growth conditions, including the ion beam assistance, ion beam discharge voltage, and deposition rate, on the microstructures and optical properties were evaluated. he films were characterized with X-ray diffraction,X-ray photoelectron spectroscopy, and atomic force microscopy. he results show that the discharge voltage strongly affects the stoichiometry.At 200V, the amorphousAl O films possess nearly stoichiometric 2 3 contents. he surface roughness decreased with an increase of the discharge voltage, and minimized at 300 V. he Al2O3 films, grown with the ion beam assistance, outperform the control sample in many ways, such as a better transmittance, a high