基于铜铝氧化物的透红外导电薄膜.PDF

35 5 Vol.35 No.5 2013 5 Infrared Technology May 2013 471009 CuAl O x y CuAl O x y CuAl O 1765Å 2.6 μm x y 62.5cm1 53% 358.9 Ω/sq 6.33103 Ω·cm TN304 A 1001-8891(2013)05-0270-04 Infrared Transparent Conductive Films Based on CuAl O x y TAO FeiSUN Wei-guoZHANG LiangWANG Li-wenZHANG LeiZHU Xu-boSI Jun-jie (China Airborne Missile Academy, Aviation Key Laboratory of Science and Technology on Infrared Detector, Luoyang 471009 China) Abstract This paper presents a novel infrared transparent conductive film based on copper aluminum oxides (CuAl O ). CuAl O films are deposited on the sapphire by reactive magnetron co-sputtering using DC x y x y applied to the high-purity Cu target, RF applied to the high-purity Al target. Some influences of films properties are discussed. These influences have included the flow of oxygen gas, the thickness of films, the time of pre-deposition Cu layer etc. It has been found that, by fine-tuning the sputtering parameters and proper control of pre-deposition Cu layer, the films with both reasonably low resistivity and high transmittance can be obtained simultaneously. The best films with a thickness of 1765 Å has the