沉积参数和退火条件对AlN薄膜电学性能影响.PDFVIP

第 17 卷第 8 期 中国有色金属学报 2007 年 8 月 Vol.17 No.8 The Chinese Journal of Nonferrous Metals Aug. 2007 文章编号：1004-0609(2007)08-1336-06 沉积参数及退火条件对AlN 薄膜电学性能的影响 周继承，胡利民 ( 中南大学 物理科学与技术学院，长沙 410083) 摘 要：利用射频反应磁控溅射在 Si (100)基底上沉积 AlN 介质薄膜，并在不同温度下对薄膜进行快速退火。通 过抗电强度测试仪、电容电压测试 C−V、X 射线衍射仪、电子能谱仪、原子力显微镜和椭圆偏振仪等研究薄膜的 击穿电压、介电常数、晶体结构、化学成分、表面形貌及薄膜的折射率。结果表明：溅射功率和溅射气压对薄膜 的击穿电压有很大的影响，溅射功率为250 W ，气压为 0.3 Pa 时薄膜的抗电性能较好；薄膜的成分随溅射气压发 生变化，N 与 Al 摩尔比最高达到 0.845 ；随退火温度的增加，薄膜晶体结构发生非晶— 闪锌矿—纤锌矿的转变； 薄膜的折射率随退火温度的升高而增加。 关键词：AlN 薄膜；磁控溅射；击穿电压；快速退火 中图分类号：TN 304.055 ；TN 305.8 文献标识码：A Effect of deposition parameters and RTA conditions on electrical properties of AlN thin films ZHOU Ji-cheng, HU Li-min (School of Physics Science and Technology, Central South University, Changsha 410083, China) Abstract: AlN dielectric thin films were deposited on N type Si (100) substrate by reactive radio frequency magnetron sputtering under different sputtering-power and total pressure. And rapid thermal annealing (RTA) was preformed on these films respectively for 5 min under different temperatures. The breakdown voltage, permittivity, crystal structure, composition, surface and refractive index of the thin films were studied by I-V, C- V, XRD, EDS, AFM and elliptical polarization instrument. The results show that the breakdown voltage of the thin films strongly depends on the sputtering-power and total pressure, the greatest breakdown voltage is found at 250 W and 0.3 Pa. EDS analysis shows that the mole ratio of