SiGe高线性低噪声射频放大器的分析与设计.pdfVIP

ABSTRACT ABSTRACT SiGe process is widely used in areas such as mobile communication, satellite location and radar tracing because of its high performance and cost-performance ratio. It’s easy for SiGe process to integrate with RF, digital and analog circuits on a chip, forming an entire SoC. More and more RF ICs are fabricated with SiGe process now. With the rapid growth of the modern wireless communications, more and more communication capacities are required. In order to realize higher data velocity and much frequency efficiency, modern communication system adopts linear modulation technique. However, linear modulation will make circuits very sensitive to any non- linear factors. Therefore, proper linearizing technique s must be used to improve the linearity of the circuits, making the system could work regularly during linear modulation. So, linear amplifiers become a research highlight. As the first stage of a wireless receiver, low noise amplifier (LNA) must do more than simply amplify signals without adding much noise. It must remain linear even when strong signals are being received. In particular, the LNA must maintain linear operation when receiving a weak signal in the presence of a strong interfering one; otherwise, a variety of pathologies may result. Therefore, the study of higher liner RF LNAs has important practical significance. This thesis focused just about on the study and design of the higher liner LNA based on the advanced SiGe process. On the basis of numerous references, this thesis researched various LNA linearizing methods thoroughly; compared the advantages and disad vantages of them; and then mod