铝诱导多晶硅薄膜的制备、性能及生长机理研究-材料加工工程专业毕业论文.docx

铝诱导多晶硅薄膜的制备、性能及生长机理研究 铝诱导多晶硅薄膜的制备、性能及生长机理研究 ratio of Si/Al thickness is small, the lower poly-Si thin film is discontinuous and after the upper layer is removed, the single large high quality poly-Si grain is obtained. Large-grained poly-Si thin film with smooth surface was prepared at 400℃- 500℃ from a-Si/SiO2/Al. The poly-Si thin film is with strong (111) preferential and of very high crystalline quality. The annealing temperature lower than 500℃ make it possible to use common galss as substrate. The poly-Si thin film has double layers too and the upper layer is of higher quality. In the experiment, wheatear morphology not ever reported for the poly-Si thin film prepared by AIC was found except for the common dendritic morphology. Initial thickness ratio of Si and Al layers, silica film at the Si/Al interface and annealing temperature are inportant factors that affect the AIC process. When initial thickness ratio of Si and Al layers increase from 5:4 to 5:1, the crystallization of amorphous silicon becomes more and more easy and the poly-Si crystalline quality becomes higher and higher. While when the ratio continues to increase from 5:1 to 25:3 the poly-Si crystalline quality becomes worse and worse and the ration of 5:1 is optical. The silica film at the Si/Al interface make the diffuse speed of Si into Al layer slower, but it is helpful to form union large poly-Si grains. The optical natural oxidation time of a-Si layer is 47 h. The research on effect of annealing temperature showed that the lower is annealing temperature, the larger is the grain size formed but the slower is the crystallization rate. High quality poly-Si was grown by HWCVD on high quality poly-Si thin film with smooth surface from substrate/a-Si/SiO2/Al stack. Poly-Si thin film with grain size larger than 100 μm has been prepared by AIC with a shorter process time at lower temperature. The condition whether there is new nucleation when the annealing temperature increases is first discussed bas