相移掩模和光学邻近效应校正光刻技术.pdf

第 28卷第 1期 光电工程 V o l. 2 8,　N o. 1 　 2001年 2 月 Opt o-Elect ro ni c Engi neeri ng Feb , 200 1　 : 100 3- 501 ( 2001) 01- 000 1- 05 X 1 1, 2 1 1 1 冯伯儒 ,张　锦 ,侯德胜 ,周崇喜 ,苏　平 ( 1. , 6 10209 2. , 610064) : 详细地论述了相移掩模提高光刻分辨力和改善焦深的原理。 介 了光学邻近效应校正方 法、改善光刻图形质量的机理及邻近效应校正掩模的 一些设计问题。 : 相移掩模 光学邻近效应校正 光刻技术 : T N 305. 7　　　: A - Optical Microlithography with Phase Shifting Mask and Optical Proximity Effect Correction 1 1, 2 1 - , , - FENG Bo ru HANG Jin HOU De sheng 1 1 - , HOU Chong xi SU Ping ( 1. State Key Laboratory of Op tical Technologies f or Microf abrication, Institute of Op tics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China 2. , , 610064, ) Dep artment of hysics Sichuan University Chengdu China : Abstract The principl e fo r im provi ng microlit hog raphic resolutio n and f ocal depth w i th ph ase- shif ti ng mask is described i n detail i n the pap er. Opti cal prox imit y ef fect co rrectio n m ethod , the m echa ni sm f or im provi ng the qu ali ty of microli thog ra phic pat tern s by PSM and OPC and some di sig n problems of the proximi ty eff ect cor rected mask are i nt ro du ced. : - Key words Ph ase shif ti ng mask Optical proxi mi t y cor rectio n Optical mi