稳恒磁场对多晶硅定向凝固结晶阶段流速场的影响-NSFC.pdf

稳恒磁场对多晶硅定向凝固结晶阶段流速场的影响 1,2,3 1 2,3 1 2,3 1 罗玉峰 ，宋华伟 ，张发云 ，彭华 ，胡云 ，饶森林 （南昌大学机电工程学院，江西 南昌 330031；2.新余学院 新能源科学与工程学院，江西 新余 338004；3.江西省高等学校硅材料重点实验 , 江西 新余338004) 摘要:采用基于有限元方法的Comsol4.3a软件对多晶硅定向凝固结晶阶段三个时期（前期、中期、后期）坩埚内硅 熔体的流速场进行数值模拟，并与不同磁场强度下的硅熔体流速场进行了对比分析。结果表明：硅熔体的平均流速 随着结晶时间的增大而减小，从初期的38μm/s减小到后期的16μm/s，下降了57.89%。施加磁场后，硅熔体的平均 流速随着磁场强度的增大而减小：结晶初期，硅熔体的平均流速减小了42.11%；结晶中期，硅熔体的平均流速减小 了58.59%；结晶后期，硅熔体的平均流速减小了45.16%。结晶阶段三个时期分别施加磁场强度为0.6T、0.4T、0.2T 时，磁场对硅熔体的对流抑制作用最为明显。 关键词：多晶硅；磁场；流速场；数值模拟； 中图分类号：TG244 文献标志码：A The Effect of Steady Magnetic Field on the Velocity Field inthe Crystallization Stage during Directional Solidification of PolySilicon 1,2,3 1 2,3 1 1 LUOYufeng ,SONGHuawei ,ZHANGFayun ,PENGHuaxia ,HUYun2,3,RAOSenlin (1.School of Mechanical and Electrical Engineering, Nanchang University, Nanchang 330031,China; 2.School of New EnergyScienceandEngineering,XinyuUniversiy,Xinyu338004,China;3.KeyLaboratoryofJiangxiUniversityforSilicon Materials,Xinyu338004,China;) Abstract:Theflowfieldofpolysiliconwithincruciblewasnumericalsimulatedinthethreeperiods(initial,middleandlate) of crystallization during the directional solidification by comsol 4.3 a which based on finite element method (fem) ,and comparativeanalyzedwiththevelocityfieldofsiliconmeltunderdifferentmagneticfieldstrength.Theresultsshowthat:the averageflowvelocityofthesiliconmeltdecreaseswiththeincreaseofcrystallizationtime, from38μm/sintheinitialstage reducetothe 16μm/sinthelatestage,whichreducedthe57.89%.Afterapplyingmagneticfield,theaverageflowvelocityof the silicon melt decreased with the increased of magnetic field intensity: The average flow velocity of the silicon melt reduced42.11%intheinitialstageofcrystallization;Andtheaverageflowvelocityofthesil