s3c新44b0 中文手册.pdfVIP

1 产品预览 介 绍 三星的S3C44B0X 16/32 位RISC 处理器被设计来为手持设备等提供一个低成本高性能的方 案。 S3C44B0X提供以下配置：2.5V ARM7TDMI 内核带有8Kcache ;可选的internal SRAM;LCD Controller(最大支持256色STN，使用LCD专用DMA) ；2-ch UART with handshake(IrDA1.0, 16-byte FIFO) / 1-ch SIO； 2-ch general DMAs / 2-ch peripheral DMAs with external request pins； External memory controller (chip select logic, FP/ EDO/SDRAM controller)； 5-ch PWM timers 1-ch internal timer ；Watch Dog Timer ；71 general purpose I/O ports / 8-ch external interrupt source； RTC with calendar function ； 8-ch 10-bit ADC ； 1-ch multi-master IIC-BUS controller； 1-ch IIS-BUS controller ； Sync. SIO interface and On-chip clock generator with PLL.。 S3C44B0X采用一种新的三星ARM CPU嵌入总线结构-SAMBA2 ，最大达66MHZ 。 电源管理支持：Normal, Slow, Idle, and Stop mode。 系统管理功能： 1 Little/Big endian support. 2 Address space: 32Mbytes per each bank. (Total 256Mbyte) 3 Supports programmable 8/16/32-bit data bus width for each bank. 4 Fixed bank start address and programmable bank size for 7 banks. 5 . 8 memory banks. - 6 memory banks for ROM, SRAM etc. - 2 memory banks for ROM/SRAM/DRAM(Fast Page, EDO, and Synchronous DRAM) 6. Fully Programmable access cycles for all memory banks. 7 Supports external wait signal to expend the bus cycle. 8. Supports self-refresh mode in DRAM/SDRAM for power-down. 9. Supports asymmetric/symmetric address of DRAM. Cache 和内部存储器功能: • 4-way set associative ID(Unified)-cache with 8Kbyte. • The 0/4/8 Kbytes internal SRAM using unused cache memory. • Pseudo LRU(Least Recently Used) Replace Algorithm. • Write through policy to maintain the coherence between main memory and cache content. • Write buffer with four depth. • Request data first fill technique when cache miss occurs. 时钟和电源管理 • Low power • The on-chip PLL makes the clock for operating MCU at maximum 66MHz. • Clock can be fed selectively to each function block b