硅斜切衬底上锗硅纳米线的生长与特性分析.pdfVIP

硕 士论文 粪年 A b stra ct V ery sm all and com p actly arranged G eS i nanow ires w ere self-assem b led on v icinal Si (00 1) substrates w ith ? 8。off tow ard (110) during G e deposition. T he nanow ires w ere all oriented along the m iscut direction. T he sm all ration of height over w idth of the nanow ire indicated that the nanow ires w ere bordered partly w ith {105} facets. T hese self-assem b led sm all nanow ires w ere rem arkab ly influenced b y the grow th conditions and the m iscut angle of sub strates in com parison w ith large dom e-like islands obtained after sufficient G e dep osition. T hese resu lts prop osed that the form ation of the nanow ire w as energetically driven under grow th kinetic a ssistan c e . A m u ltilayer of G eS i nanow ires separated w ith S i spacers w as readily self-assem b led on m iscut Si (00 1) substrates w ith 8 ° off tow ard 110 . T he nanow ires w ere v ery sm all and com pactly arranged on the vicinal surface. System atic photolum inescence (P L) spectroscopy studies w ere carried out on the G eS i nanow ires w ere carried out. W ith increasing excitation pow er, a sub linear pow er dependent P L intensity and a b lue-shift of ?7 m eV /decade w ith nearly constant full w idth of half m axim um (FW H M ) of P L peaks from m ultilayer G eS i nanow ires w as ob served. T hese results indicated a typ ical typ e-II band alignm ent of G eS i nanow ires/Si. T he blue-shift w as attributed to band bending effect w ith the increase of photon-generated carriers. T he nearly indep endent FW H M of P L peaks w ith the excitation pow er w as explained in term s of the form ation of m ini-band due to strong coup ling of holes in closely neighboring nanow ires. A n activation energy of ? 12 m eV w as extracted from the tem