终稿-石基体上制备002AlN薄膜的研究9.docVIP

金刚石基底上制备（002）AlN薄膜的研究* * 基金项目:国家自然科学基金， 天津市支撑重点项目（10ZCKFGX01200），天津市自然基金重点项目（09JCZDJC16500,10SYSYJC27700） ** E-mail：bhyang207@163.com 古少杰，杨保和**，张明伟，崔健，李翠平 (天津理工大学 电子信息工程学院，天津市薄膜电子与通信器件重点实验室，天津市，300384) 摘要:采用微波等离子体CVD方法，在O2/ H2/ CH4混合气体气氛下利用大功率微波在(100)Si片上生长出了异质外延金刚石膜，用X-射线衍射分析仪（XRD）、拉曼光谱仪和扫描电子显微镜（SEM）对薄膜的结构和形貌进金刚石行了表征分析，结果表明，制备的金刚石膜具有很高的金刚石相纯度，且晶粒排列紧密；采用射频磁控反应溅射法，在抛光的金刚石基底上成功制备了高C轴择优取向的AlN薄膜，研究了不同的溅射气压、靶基距对AlN薄膜制备的影响，XRD检测结果表明，溅射气压低，靶基距短，有利于AlN（002）面择优取向，相反，则更有利于AlN薄膜的（103）面和（102）面择优取向；研究了AlN薄膜在以氮终止的金刚石基底和纯净金刚石基底两种表面状态上的生长机制，发现以氮终止的金刚石基底非常有利于AlN（002）面择优取向生长。并从Al-N化学键的形成以及溅射粒子平均自由程的角度探讨了其对AlN薄膜择优取向的影响。 关键词: AlN薄膜；择优取向；金刚石；化学键；平均自由程 The research of preparation of （002）AlN thin film on diamond substrate Gu Shaojie，Yang Baohe**，Zhang Mingwei，Cui Jian，Li Cuiping (School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China.) Abstract： The heterogeneous extension of diamond films has deposited on (100) Silicon in O2/ H2/ CH4 mixture atmosphere by microwave plasma CVD method,we characterized structure and morphology of diamond films by X-ray diffraction analyzer(XRD)、Raman spectrometer and field emission scanning electron microscopy(FESEM),the results show that the preparation of diamond films has high diamond phase purity and closely spaced grain;AlN thin films with highly C-axis prefential orientation has been deposited on polished diamond substrates by RF magnetron sputtering.The influence of sputtering pressure、target-substrate distance on the AlN film preparation has been studied. X-ray diffraction analyzer(XRD) tests show that AlN(002) preferential orientation easily forms at low sputtering pressure、short target-substrate distance,on the contrary,it is more favorible to the AlN thin films with preferential orientations (103) and (102);The growth mechanisms of AlN thin films on different surface states of diamond substrate were studied,It was found than AlN thin films deposited on nitrogen-terminated diamond su