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- 2019-07-13 发布于广东
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Absh‘act
Abstract
I—II—V12 the of
CulnS2,a typesemiconductor,possessesproperties
typical
hasthree
semiconductor.Generally,CulnS2crystal
andunknown.Thesemiconductorcanalter theratioof
type throughcontrolling
of isabout tothe bandof
band CuInS2 1.5eV,close
(Cu+In)/S.Thegap optimumgap
solar isadirectband
dye-sensitizedcells(1.45eV).CulnS2 gap
reducesthediffusionof carders.Theabovestatementsindicatethat
minority CHINS2
haveexcellent canbeusedasthecounterelectrode
electrocatalyticactivity,which
materialfor solar isatwodimension
dye—sensitizedcells.Graphene hexagonal
carbonmaterialwith electron
area,.excellent
honeycomb superlargespecific mobility
mechanical havethe in
,(15000mA·m二1·K.1)and strength,·whichpotentialapplication
solar eta1.Therefore,the
cells,lithium:ionscells,supercapacitor,desalination
ourresearchisto,combine and a
CuInS2 two-step
.purpose、of graphene through
sothat can excellent
:hydrothermal.approachthe、compositepossesses electrocatalytic
from and from enhancesthe
CulnS2
a
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