二次电子发射效应对容性耦合等离子体的影响：混合模型模拟-等离子体物理专业毕业论文.docxVIP

二次电子发射效应对容性耦合等离子体的影响：混合模型模拟Effects 二次电子发射效应对容性耦合等离子体的影响：混合模型模拟 Effects of secondary electron emission on capacitive coupled plasmas： Hybrid model simulation Abstract Capacitively coupled plasma source(Capacitively Coupled Plasmas，CCP)is a necessary integral part of the semiconductor manufacturing process equipment，generally CCP discharge has the following advantages：the discharge chamber is simple and easy to build，at a low pressure discharge can produce large·area uniform plasma which Can depositing a semiconductor film effectively，but also Can control the ion energy produce energetic ion bombardment etch material．But with the rapid development of the microelectronics industry， the semiconductor device dimensions become increasingly smaller，which is a higher CCP discharge requirements．In order to meet the needs of the semiconductor process，CCP source is evolving and progress，the process CCP source external discharge parameter selection is very important，such as power supply selection(single-frequency，dual—band，multi·frequency， DC)，pressure，discharge gap，etc．parameter．They determine the density，flux，ion energy and other internal plasma parameters，these parameters on the deposition rate，etch selectivity and etch rate has a direct impact．Therefore，it is necessary to examine the effects of these external parameters． In CCP discharge，acceleration of ions in the electric field of the sheath to the electrodes to bombardment，secondary electrons are emitted．Since the CCP discharge pressure is not usually very low(tens to hundreds of mTorr)，secondary electron discharge in the discharge will have a certain impact．Most CCP no detailed simulations Effect of secondary electrons， the paper mainly studies considered secondary electron(ion-induced)of the discharge parameters，and to analyze the role played by secondary electrons in the discharge．In this paper，fluid and electronic Monte Carlo method mixed model simulation．Fluid model generally has the advantage of fast calculation，bu