MEM8205F_E4.0微盟原厂规格书.pdf免费

MEM8205 N-Channel MOSFET MEM8205F General Description Features MEM8205FG Dual N-channel enhancement mode  20V/6A field-effect transistor ,produced with high cell density R =20mΩ@ V =4.5V,I =6A DS(ON) GS D DMOS trench technology, which is especially used to R =21mΩ@ V =3.85V,I =5A DS(ON) GS D minimize on-state resistance. This device

文档评论(0)

1亿VIP精品文档

相关文档