在稳态-动态磁场作用下大尺寸晶体直拉生长的硅熔体流动模拟(使.docVIP

Journal of Crystal Growth 230(200192–99 Numerical investigation of silicon melt ?ow in large diameter CZ-crystal growth under the in?uence of steady and dynamic magnetic ?elds J. Virbulis a, *,Th. Wetzel b , A. Muiznieks b , B. Hanna a , E. Dornberger a , E. Tomzig a , A. M . uhlbauer b , W.v. Ammon a a Wacker Siltronic AG, P.O. Box 1140, Bur g hausen, D-84479, Germany b Institute for Electroheat, Uni v ersity of Hanno v er, Wilhelm-Busch str.4, D-30167, Hanno v er, Germany Abstract Turbulent silicon melt ?ows are studied in large diameter Czochralski crucibles under the in?uence of alternating, steady and combined magnetic ?elds. The investigations are based on the experimentally veri?ed two-dimensional axisymmetric mathematical models. The in?uence of steady, alternating and combined magnetic ?elds on the ?ow pattern andtemperature ?eldis investigated . Global heat transfer andmelt ?ow calculations are coupledandthe in?uence of melt convection on the interface shape is studied and compared with experimental data. r 2001Elsevier Science B.V. All rights reserved. PACS:47.27.i; 47.65.+a Keywords:A1. Fluid ?ows; A1. Heat transfer; A1. Magnetic ?elds; A2. Czochralski method; B2. Semiconducting silicon 1. Introduction The conversion to large silicon (Sisingle crystals of 300mm diameter requires larger batch sizes which generates turbulent melt convection with Grashof number up to 1010. Several e?orts of the crystal growth industry are dedicated to control the melt ?ow andthe temperature d is-tribution. In particular, its focus is on the correct prediction of the interface shape and the related point defect distribution in the crystal, of the oxygen transport, of the crucible overheating and of the dislocation free growth. Besides conven-tional means, electromagnetic steady (DCand dynamic (AC?elds o?er new possibilities to meet the continuously increasing demands for crystal quality, yieldimprovement andcost red uction. A numerical simulation helps in investigating the