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- 约1.25千字
- 约 38页
- 2020-06-09 发布于天津
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第九章 光辐射探测器Radiation Detector;光热效应Photothermal Effect;光热效应Photothermal Effect;半导体基本概念-能带Basic Concept of Semiconductor—Energy Band;半导体基本概念-能带Basic Concept of Semiconductor—Energy Band;光子与半导体相互作用Interaction Between Photon and Semiconductor;常温下半导体的统计特性Semiconductor Statistics at normal temperature;根据导带电子浓度计算公式,可得;N型半导体N- type Semicondutor ;P型半导体P- type Semicondutor;P型和N型半导体P- and N- type Semicondutor;半导体的PN结PN Junction of Semicondutor;半导体的PN结PN Junction of Semicondutor;半导体的PN结PN Junction of Semicondutor;半导体的PN结-正向偏压Forward Bias;半导体的PN结-反向偏压Reverse Bias;半导体的PN结-反向偏压Reverse Bias;光电导效应Photoconductivity ;光电导效应-响应时间Photoconductivity-Respond;光伏效应Photovoltage;光电发射效应Photoemission;光探测器的噪声Noises of Radiation Detector;光探测器的噪声Noises In Radiation Detector;光探测器的噪声Noises In Radiation Detector;光探测器的噪声Noises In Radiation Detector;光探测器的性能参数Features and Performance parameters of Radiation Detector;光探测器的性能参数Features and Performance parameters of Radiation Detector;光热探测器-热敏电阻 Photothermal Detector ;光热探测器-热释电探测器Photothermal Detector;光热探测器-热释电探测器Photothermal Detector;光电导器件Photoconductive Device;光电导器件Photoconductive Device;光电导器件Photoconductive Device;结型光电器件PN-Type Optoelectronic Device;光电池 (Solar Cell);光电池 (Solar Cell);
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