一种光电流谱测试方法表征掺杂Al的ZnO多孔膜光电性能.docVIP

一种光电流谱测试方法表征掺杂Al的ZnO多孔膜光电性能 电子测量技术 Electronic Measurement 10.3969/j.issn.1000-0755.2013.06.026 一种光电流谱测试方法表征掺杂的 多孔膜光电性能 李华曜谢长生 杨其成朱强 (华中科技大学材料成型与模具技术国家重点实验室,湖北武汉) 摘要:文章设计并搭建了一个金属氧化物半导体材料光电流谱测试平台。采用溶胶凝胶的方法在FTO 上制作了掺杂Al的ZnO多孔膜材料并测试了其光电流谱。通过测试结果可以看到,相对于纯ZnO,掺杂Al的 ZnO多孔膜在入射光波长为480nm时有明显响应,同时响应的绝对值也较高。这是由于掺杂Al导致多孔膜中 Zn空位增加而引起的。这个现象表明掺杂的方式会引入特定的缺陷,使得材料在本征光电导区间外也有一 定的响应,可以扩展了材料的波长响应区间。同时,我们的研究也表明,光电流谱的测试方式可以原位、 直接、快速和准确地表征材料中缺陷对光电性能的影响。 关键词:光电流谱;掺杂;金属氧化物半导体;多孔膜 Characterization of Photoelectrical Performance of Al-doped ZnO Porous Film Using Photocurrent Spectrum Measurement Li Huayao Xie Changsheng Yang Qicheng Zhu Qiang State Key Laboratory of Material Processing and Die Mould Technology,Huazhong University of Science and Technology, Wuhan, Hubei Abstract: In this paper, a metal oxide semiconductor photocurrent spectrum test platform is designed and set up. The Al-doped ZnO porous film is prepared by sol-gel method on the FTO substrate, and its photocurrent spectrum is tested. From the result we can see that the Al-doped ZnO porous film shows an obvious response at the incident wavelength of 480nm, which has a big discrepancy to the as-grown ZnO, and its response amplitude is higher. This is attributed to the Zn vacancy increase in the porous film which introduced by the Al doping. The result shows that the doping method may introduce specific defects to the material and extend the materials response wavelength. At the meantime, the photocurrent spectrum test can characterize the effect of the defects in the material on the photoelectrical performance directly, rapidly, accurately and in-situ. Key word: photocurrent spectrum; doping; metal oxide semiconductor; porous film 引言 的缺陷怎样影响金属氧化物半导体材料的光电性 金属半导体材料由于其具有许多独特的光电性能 能。对于这个问题,研究人员通常采用光电流时 而被广泛应用于电子、航空、激光、催化、传感、 域曲线测试方式 Time-resolved photocurrent tests 军事等关键领域中。目前,ZnO由于其具有良好的 来评价金属氧化物半导体的光电性能 。这种 测试方式的优点是原位、方便快捷,但由于其测 光电性能、易于合成等优点在这些领域中有着广泛 的应用,但是因为其禁带宽度较大约 3.2eV ,使得 试所用的光源波长是固定的,故所得到