大学物理实验报告 英文版.docVIP

大学物理实验报告 Ferroelectric Control of Spin Polarization ABSTRACT A current drawback of spintronics is the large power that is usually required for magnetic writing, in contrast with nanoelectronics, which relies on “zero-current,” gate-controlled operations. Efforts have been made to control the spin-relaxation rate, the Curie temperature, or the magnetic anisotropy with a gate voltage, but these effects are usually small and volatile. We used ferroelectric tunnel junctions with ferromagnetic electrodes to demonstrate local, large, and nonvolatile control of carrier spin polarization by electrically switching ferroelectric polarization. Our results represent a giant type of interfacial magnetoelectric coupling and suggest a low-power approach for spin-based information control. Controlling the spin degree of freedom by purely electrical means is currently an important challenge in spintronics ( 1,? 2). Approaches based on spin-transfer torque ( 3) have proven very successful in controlling the direction of magnetization in a ferromagnetic layer, but they require the injection of high current densities. An ideal solution would rely on the application of an electric field across an insulator, as in existing nanoelectronics. Early experiments have demonstrated the volatile modulation of spin-based properties with a gate voltage applied through a dielectric. Notable examples include the gate control of the spin-orbit interaction in III-V quantum wells ( 4), the Curie temperature?TC?( 5), or the magnetic anisotropy ( 6) in magnetic semiconductors with carrier-mediated exchange interactions; for example, (Ga,Mn)As or (In,Mn)As. Electric field–induced modifications of magnetic anisotropy at room temperature have also been reported recently in ultrathin Fe-based layers ( 7,? 8). A nonvolatile extension of this approach involves replacing the gate dielectric by a ferroelectric and taking advantage of the hysteretic response of its order parameter (polarization) with an electric