亿光光电开关itr20402技术规格书.docxVIP

Technical Data Sheet OPTO INTERRUPTER ITR ITR20402 Features ?Fast response time ?High sensitivity ?Cut-off visible wavelength λp=940nm ?Thin ?Small package ?Pb free ?This product itself will remain within RoHS compliant version Descriptions The ITR20402 consists of an infrared emitting Diode and a silicon phototransistor encased in a black Thermo-plastic housing. The advantage of the device is the small package. Phototransistor receives radiation from the IRED only, and avoids the noise from ambient light Applications ?Camera ?Copier ?Scanner ?Non-contact Switching ?For Direct PC Board Device Selection Guide Device No. Chip Material IR1918C GaAlAs PT1918B Silicon Everlight Electronics Co., Ltd.  http:\\  Rev 1  Page: 1 of 9 Device No：  CDRX-204-004  Prepared date：2006/06/05  Prepared by：zhouhong ITR20402 Package Dimensions 2 3 1:Anode 1 4 2:Cathode 3:Collector 4:Emillter A-A SECTION Notes: 1.All dimensions are in millimeters 2.Tolerances unless dimensions ±0.25mm █Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Ratings Unit Power Dissipation at(or below) 25℃ Free Pd 75 mW Air Temperature Input Reverse Voltage VR 5 V Forward Current IF 50 mA Peak Forward Current (*1) IFP 1 A Pulse width ≦100μs, Duty cycle=1% Collector Power Dissipation PC 75 mW Output Collector Current IC 20 mA Collector-Emitter Voltage B VCEO 30 V Emitter-Collector Voltage B VECO 5 V Operating Temperature Topr -25~+85 ℃ Storage Temperature Tstg -40~+85 ℃ Lead Soldering Temperature (*2) Tsol 260 ℃ (＊1)  tw=100  μsec. ,  T=10 msec.  (＊2)  t=5 Sec Everlight Electronics Co., Ltd.  http:\\  Rev 1  Page: 2 of 9 Device No：  CDRX-204-004  Prepared date：2006/06/05  Prepared by：zhouhong ITR20402 Electro-Optical Characteristics (Ta=25℃) Parameter Symbol Min. Typ. Max. Unit Conditions Forward Voltage VF 1.2 1.6 V IF=20mA Input Reverse Current IR 10 μA VR=5V Peak Wavelength λP 940 nm Dark Current ICEO 1 100 nA VCE=10V Output C-E Saturation VCE(sat) 0.4 V IC=2mA Voltage ,Ee=1mW/cm2 Collector