晶体缺陷作业.docxVIP

1 什么叫肖特基缺陷和弗兰克耳缺陷用 Kroger-Vink 记号分别描述 AgBr 中的弗 兰克耳缺陷和 MgO中的肖特基缺陷形成的缺陷化学方程， 写出 ZnO中掺杂 Al 2O3 空位补偿和电子补偿的缺陷化学方程。 2 If cupric oxide (CuO) is exposed to reducing atmospheres at elevated temperatures, some of the Cu 2+ ions will become Cu +. Under these conditions, name one crystalline defect that you would expect to form in order to maintain charge neutrality. How many Cu + ions are required for the creation of each defect How would you express the chemical formula for this nonstoichiometric material 3 (a) Suppose that Li 2O is added as an impurity to CaO. If the Li + substitutes for Ca 2+, what kind of vacancies would you expect to form How many of these vacancies are created for every Li added (b) Suppose that CaCl2 is added as an impurity to CaO. If the Cl - 2- , what kind of vacancies would you expect to form How substitutes for O many of the vacancies are created for every Cl - added 4 纯铁的空位形成能为 atom，将纯铁加热至 850℃后激冷至室温 20℃, 若高温下 的空位全部保留，试求过饱和空位浓度与室温平衡空位浓度的比值。 5 已知铜的晶体结构为 fcc, 点阵常数 a=，切变模量 G 4 1010 N m 2 ，试分别计 算柏氏矢量为 a [101] a [11 1] a [111] a [121] 的位错应变能。 2 3 2 6 6 在图示的 Cu晶界上有一双球冠形第二相， 已知 Cu的大角度晶界能为 0.5J ? m2 ， (1) 分别计算当 60o , 90 o 时 Cu与第二相之间的相界面能； 讨论它们若处在三个 Cu晶粒的交线上将是什么形状。 7 计算并比较体心立方晶体中（ 100），（110），（111）面的比表面能。设每对原 子键能为ε，点阵常数为 a。