20VP沟道增强型MOSFETMOS管精.docxVIP

20V P-Cha nnel En ha nceme nt-Mode MOSFET V DS = -20V R DS(ON, Vgs@-4.5V, lds@-2.8A = 100 m Q R DS(ON, Vgs@2.5V, lds@-2.0A = 150m Q Features Adva need trench p rocess tech no logy High Den sity Cell Desig n For Ultra Low On-Resista nee Fully Characterized Avala nche Voltage and Curre nt Impro ved Shoot-Through FOM SOT-23 (TO H236AB we declare that the material of p roduct comp lia nee with RoHS requ ireme nts. ▼ Sim pie Drive Requireme nt ▼ Small P ackage Outli ne ▼ Surface Mou nt Device 3 3 XP2301L Maximum Rat ings and Thermal Characteristics (TA = 25o C uni ess otherwise no ted Parameter Dra