场效应MOS管AK2333Y参数-6A-12V封装SOT-23-3L.pdf免费

AK2333Y AK P-Channel Enhancement Mode Power MOSFET Description The AK2333Y uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G load switch or in PWM applications. S General Features Schematic diagram ● V = -12V,I = -6A DS D RDS(ON) 45mΩ(max) @ VGS=-2.5V RDS(ON) 30mΩ(max) @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch ● Power management Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 2333Y AK2333Y SOT-23-3L Ø180mm 8 mm 3000 units Absolute Maximum Ratings (TA=25 ℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ±12 V Drain Current -Continuous ID -6 A Drain Current -Pulsed (Note 1) IDM -20 A Maximum Power Dissipation