2N7002AK NJ SOT-23-200mA广东奥科半导体.pdf免费

2N7002K SOT-23 N-Channel Enhancement MOSFET 3 High Speed Switching Applications ESD protected gate 2 1.GATE Low ON-resistance 2.SOURCE RDS(on) = 2.8 Ω(typ.) (@VGS = 10 V) 1 3.DRAIN RDS(on) = 3.1 Ω(typ.) (@VGS = 5 V) RDS(on) = 3.2 Ω(typ.) (@VGS = 4.5 V) ■Simplified outline(SOT-23) 3 1 2 Equivalent Circuit (top view) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain–source voltage VDSS 60 V Gate–source voltage VGSS ± 20 V DC ID 200 Drain current (Note1) mA Pulse IDP (Note 2) 760