场效应MOS管AK60P40AY参数-4.6A-60V封装SOT-23-3L.pdf免费

AK60P40AY AK P-Channel Enhancement Mode Power MOSFET Description The AK60P04AY uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram ● V =-60V,I =-4.6A DS D RDS(ON) 75mΩ @ VGS=-10V RDS(ON) 96mΩ @ VGS=-4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Load switch ● PWM application Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 60P04AY AK60P04AY SOT-23-3L Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -4.6 A Pulsed Drain Current IDM -17 A Maximum Power Dissipation PD 1.5 W Operating Junction and Storage Temperature Ran