场效应MOS管AK2004NE参数6A20V封装SOT-23-6L.pdf免费

AK2004NE AK N-Channel Enhancement Mode Power MOSFET Description The AK2004NE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features Schematic diagram ● V = 20V,I =6A DS D RDS(ON) 30mΩ @ VGS=2.5V RDS(ON) 24mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM application ● Load switch Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 2004NE AK2004NE SOT23-6L Ø330mm 12mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 6 A Drain Current-Pulsed (Note 1) IDM 30 A Maximum Power Dissipation PD 1.25 W Operating Junction and Storage Temperature Range TJ ,TSTG