场效应MOS管AK0102M参数2A100V封装SOT-89.pdf免费

AK0102M AK N-Channel Enhancement Mode Power MOSFET Description D The AK0102M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. G General Features S ● V = 100V,I = 2A DS D Schematic diagram RDS(ON) 240mΩ @ VGS=10V (Typ:210mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 0102 AK0102M SOT-89 Ø330mm 12mm 2500 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 2 A Drain Current-Pulsed (Note 1)