AKZE12N10广东奥科半导体.pdf免费

AKZE12N10 N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY FEATURES ® • TrenchFET Power MOSFET V (V) R () I (A) DS DS(on) D 100 0.114 at V = 10 V 15 • 175 °C Junction Temperature GS • PWM Optimized • 100 % R Tested g • Compliant to RoHS Directive 2002/95/EC APPLICATIONS D • Primary Side Switch TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100