场效应MOS管AK40H20参数200A40V封装TO-220.pdf免费

AK40H20 AK N-Channel Enhancement Mode Power MOSFET Description The AK40H20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● V = 40V,I =200A DS D RDS(ON) 4mΩ @ VGS=10V (Typ:3.3mΩ) Schematic diagram ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply 100% UIS TESTED! 100% ΔVds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AK40H20 AK40H20 TO-220-3L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 200 A Drain Current-Continuous(T =100℃) I (100℃) 140 A C