场效应MOS管AK2305A参数-4.1A-12V封装SOT-23.pdf免费

AK2305A AK P-Channel Enhancement Mode Power MOSFET Description D The AK2305A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features ● V = -12V,I = -4.1A DS D RDS(ON) 60mΩ @ VGS=-2.5V RDS(ON) 45mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch ● Power management Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 2305A AK2305A SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (TA=25 ℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ±12 V Drain Current -Continuous ID -4.1 A Drain Current -Pulsed (Note 1) IDM -15 A Maximum Power Dissipation