场效应MOS管AK3401AY参数-4.4A-30V封装SOT-23-3L.pdf免费

AK3401AY AK P-Channel Enhancement Mode Power MOSFET Description D The AK3401AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram ● V = -30V,I = -4.4A DS D RDS(ON) 80mΩ @ VGS=-2.5V RDS(ON) 65mΩ @ VGS=-4.5V RDS(ON) 52mΩ @ VGS=-10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch ● Power management Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 3401AY AK3401AY SOT-23-3L Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID -4.4 A Drain Current-Pulsed (Note 1)